The value of electron mobility in an intrinsic semiconductor at 300 K is 1500 cm2/Vs and the corresponding volt equivalent of the temperature is 25.9 mV. What will be the value of electron diffusion constant? Select the closest approximation.
If represents the drift velocity of electron and is the mobility of electron, then which of the following relation is true?
The intrinsic carrier density in silicon is /cm3. For n-type silicon doped to atoms/cm3, the equilibrium 'hole' density will be
Which of the following expressions is correct for the Fermi level of n-type material?
Which of the following a correct sequence of the material in order of their increasing value of perm….
Which of the following a correct sequence of the material in order of their increasing value of permittivity?
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The residual resistivity of a material
The dielectric constant of a material in an alternating field depends upon I. Maximum current density in the insulatorII. TemperatureIII. Applied voltageIV. Frequency of the alternating field applied The correct statements are
Which among the following can describe the hysteresis loop of a material above Curie temperature?
Superconductivity of a material can be destroyed by I. Increasing the current to a point above the critical current.II. Increasing the temperature above a certain limit.III. Passing current above a certain limit through the material.IV. Applying a magnetic field above a certain limit....
The silicon steel used for electrical purpose has silicon content of
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