Consider a semiconductor having Eg = 1.1 eV & Nc = Nv. It is doped with 1015 cm–3 donors, where the donor level is 0.2 eV below Ec. Given that EF is 0.25 eV below Ec. The intrinsic concentration (ni) of the semiconductor at 300 K is

Consider a semiconductor having Eg = 1.1 eV & Nc = Nv. It is doped with 1015 cm–3 donors, ….

Tagged: Electronics and Communication Engineering - EC, Graduate Engineering, IES-ESE, IES-ESE (Engineering Services Examination)

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04/30/2019 at 6:30 am #725586 Reply
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Consider a semiconductor having E_g = 1.1 eV & N_c = N_v. It is doped with 10¹⁵ cm^–3 donors, where the donor level is 0.2 eV below E_c. Given that E_F is 0.25 eV below E_c. The intrinsic concentration (n_i) of the semiconductor at 300 K is
Options :-
1. 10 10⁹/ cm³
2. 9.35 10⁹/ cm³
3. 1.5 10¹⁰/ cm³
4. 1 10⁹/ cm³
Answer/ Explanation
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